Symbol. Parameter. Value. Unit. VCBO. Collector-Emitter Voltage (IE = 0). V. VCEO. Collector-Emitter Voltage (IB = 0). V. VEBO. Emitter-Base Voltage (IC. SMBT A. 1. Oct NPN Silicon Switching Transistor. • High DC current gain: mA to mA. • Low collector-emitter saturation voltage. Datasheet contains the design specifications for product development. Datasheet contains preliminary data; supplementary data will be.
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It is designed for low to medium currentlow powermedium voltageand can operate at moderately high speeds. It was originally made in the TO metal can as shown in the picture. The 2N is considered a very common transistor,    and is used as an exemplar of an NPN transistor.
It is frequently used as a small-signal transistor,   and it remains a small general purpose transistor  of enduring popularity. The JEDEC registration of a device number ensures particular rated values will be met by all parts offered under that number.
JEDEC registered parameters include outline dimensions, small-signal current gaintransition frequencymaximum values for voltage withstand, current rating, power dissipation and temperature rating, and others, measured under standard test conditions. Other part numbers will have different parameters.
The exact specifications depend on the manufacturer, case type, and variation. Therefore, it is important to refer to the datasheet for the exact part number and manufacturer.
All variations have a beta or current gain h fe of at least in optimal conditions. It is used in a variety of analog amplification and switching applications.
PN2222A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Replacements for the 2N are commonly available now in the cheaper TO packaging, where it is known as the PN or P2N, which has similar specifications except for the lower maximum collector current. Single transistors are also available in several different surface mount packages, and a number of manufacturers market surface mount packages that incorporate several 2Ntype transistors in one package as an array of transistors.
The general specifications of the various variants are similar, dayasheet the biggest difference 22222a the maximum allowable current and power dissipation. The BC is a low voltage, low current, general-purpose switching transistor in a TO package.
The 2N is an NPN transistor that can only switch one-third the current of the 2N but has dattasheet similar characteristics. The 2N exhibits its forward gain beta peak at a lower current than the 2N, and is useful in amplifier datashfet with reduced I ce.
From Wikipedia, the free encyclopedia. Graf and William Sheets Build your own low-power transmitters: The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are still useful in new designs and are still popular for experimenters.
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High frequency and microwave engineering. Typical examples are the well known NPN and PNP industrial and military types, 2N and 2N, which have been used for over four decades and are still being used in many designs.
Archived from the original on 14 April Retrieved 26 March Since its initial product launch by Motorola at the IRE Convention, the 2N has become the most widely used and universally recognized transistor of all time. Billions of units have been manufactured over the past 45 years and there is continuing high volume annual production.
Junkbots, bugbots, and bots on wheels: Learn to keep datashewt eye open for the following transistors, as they’re among the datashewt useful, inexpensive, and popular types: They’re listed together because they’re complementary transistors.